Abstract
Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin- ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.
- Received 16 August 2017
- Revised 1 January 2018
DOI:https://doi.org/10.1103/PhysRevApplied.9.034022
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