Abstract
In this paper, a p-type diffusion process based literally on single-step metal-organic vapor-phase diffusion (MOVPD) employing diethyl zinc as the diffusion source in combination with the recessetching technique is developed to improve the dark-current characteristics of planar-type avalanche photodiodes (APDs). The developed single-step MOVPD process exhibits on excellent linear relationship between the diffusion depth and the square root of the diffusion time, which mainly results from maintaining constant source diffusion. The single-step MOVPD process without any additional thermal activation process achieves a surface doping concentration of 1.9 × 1018 cm -3, which is sufficient to form ohmic contact. The measured diffusion profiles of the APDs clearly reveal the presence of a two-dimensional diffusion front formed by the recess-etched and guard-ring regions. The impact of this p-type diffusion process on the performance of the APD devices has also been demonstrated by exhibiting improved dark-current characteristics for the fabricated APDs.
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Jun, DH., Jeong, H.Y., Kim, Y. et al. Single-step metal-organic vapor-phase diffusion for low-dark-current planar-type avalanche photodiodes. Journal of the Korean Physical Society 69, 1341–1346 (2016). https://doi.org/10.3938/jkps.69.1341
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DOI: https://doi.org/10.3938/jkps.69.1341