Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

Yoji Chiba; Yuichi Yamazaki; Takahiro Makino; Shin Ichiro Sato; Naoto Yamada; Takahiro Satoh; Kazutoshi Kojima; Sang Yun Lee; Yasuto Hijikata; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.963.709

Paper Titles

High-Voltage SiC-JFET Fabrication and Full Characterization
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Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices
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First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept
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Development of SOI FETs Based on Core-Shell Si/SiC Nanowires for Sensing in Liquid Environments
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Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
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First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC
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Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models
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Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons
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Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Creation of Color Centers in SiC PN Diodes Using...

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

Abstract:

We demonstrated that silicon vacancy (V_Si) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The V_Si showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable V_Si was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited V_Si at room temperature. This result suggests that V_Si introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a V_Si-based quantum sensor.